**HMC984LP4ETR: A 24 GHz GaAs pHEMT MMIC Low-Noise Amplifier for High-Frequency Receiver Systems**
The relentless drive for higher data rates and greater bandwidth in modern communication and radar systems has propelled the development of advanced components operating in the millimeter-wave (mmWave) spectrum. The **K-band, specifically around 24 GHz**, has become a critical frequency range for applications such as **automotive radar, 5G backhaul, and satellite communications**. At the heart of any high-performance receiver chain in these systems lies the low-noise amplifier (LNA), whose performance fundamentally dictates the system's sensitivity and overall capability. The HMC984LP4ETR from Analog Devices Inc. represents a state-of-the-art solution designed to meet these demanding requirements.
This monolithic microwave integrated circuit (MMIC) is fabricated using a high-performance **0.15 µm GaAs pHEMT (Pseudomorphic High-Electron-Mobility Transistor)** process. This technology is chosen for its superior electron mobility and carrier confinement, which are essential for achieving excellent high-frequency performance, low noise, and high linearity simultaneously. The amplifier is housed in a compact, RoHS-compliant 4x4 mm LP4 leadless package, making it suitable for space-constrained PCB designs common in modern RF modules.
The core electrical performance of the HMC984LP4ETR is impressive. It delivers a high **small-signal gain of 21 dB** at 24 GHz, effectively amplifying extremely weak signals received by the antenna with minimal added distortion. Crucially, it achieves an exceptionally **low noise figure (NF) of 1.8 dB**, which is paramount for maintaining the integrity of the signal and maximizing the signal-to-noise ratio (SNR) of the entire receiver. Furthermore, the amplifier exhibits a high output IP3 (OIP3) of +27 dBm, ensuring strong linearity and the ability to handle large interfering signals without generating significant intermodulation distortion that could desensitize the receiver.
The device is designed for ease of integration and robustness. It requires a single positive supply voltage ranging from +3V to +5V, drawing a typical current of 80 mA. It is also internally matched to 50 Ohms at both the input and output ports, simplifying the design process by reducing the need for external matching components. This feature allows RF designers to implement a high-performance 24 GHz LNA with minimal external parts, reducing both board space and bill-of-materials complexity. The inclusion of DC blocking capacitors on both RF ports further streamlines the design process.
In application, the HMC984LP4ETR is an ideal building block for the front-end of various high-frequency systems. Its combination of high gain and low noise makes it perfect for the first amplification stage in **24 GHz automotive radar receivers (e.g., for blind-spot detection and collision avoidance)**, point-to-point radio links, and satellite communication ground terminals. Its robustness and linearity also make it suitable for use in test and measurement equipment.
**ICGOODFIND:** The HMC984LP4ETR stands out as a premier MMIC LNA, expertly engineered to provide the critical combination of **high gain, ultra-low noise, and excellent linearity** at 24 GHz. Its GaAs pHEMT foundation and 50-Ohm matched design make it an indispensable and efficient solution for advancing the performance and simplifying the design of next-generation high-frequency receiver systems.
**Keywords:** **Low-Noise Amplifier (LNA), GaAs pHEMT, 24 GHz, Millimeter-Wave (mmWave), High Linearity**
