Infineon BSC014N03MSG 30V N-Channel MOSFET Datasheet and Application Overview

The Infineon BSC014N03MSG is a state-of-the-art N-Channel MOSFET designed using Infineon’s advanced OptiMOS™ technology. This power MOSFET is engineered to deliver exceptional efficiency and high power density in a wide range of applications, making it a preferred choice for designers focused on performance and thermal management.

With a low drain-source on-resistance (RDS(on)) of just 1.4 mΩ at 10 V, this 30 V device minimizes conduction losses, enabling higher efficiency in power conversion stages. Its compact SuperSO8 package offers an excellent thermal-to-size ratio, which is crucial for space-constrained designs requiring effective heat dissipation. The BSC014N03MSG is optimized for high-frequency switching operations, making it highly suitable for synchronous rectification in switch-mode power supplies (SMPS), DC-DC converters, and motor control circuits.

A key advantage of this MOSFET is its low gate charge (Qg) and reduced internal capacitances, which contribute to faster switching speeds and lower driving losses. These characteristics are particularly beneficial in applications such as server power supplies, telecom infrastructure, and automotive systems, where energy efficiency and reliability are critical.

The device also features a robust body diode with good reverse recovery characteristics, enhancing its performance in half-bridge and full-bridge topologies. Designers should carefully consider layout parasitics and gate driving conditions to maximize switching performance and avoid issues like voltage spikes or oscillations.

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ICGOODFIND: The Infineon BSC014N03MSG sets a high standard for low-loss power switching, combining ultra-low RDS(on), compact packaging, and excellent dynamic performance. It is an ideal solution for modern high-efficiency power management systems.

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Keywords:

OptiMOS™ Technology

Low RDS(on)

Synchronous Rectification

High-Frequency Switching

Power Density