Infineon SPW35N60CFD: A High-Performance 600V CoolMOS™ CFD2 Power Transistor

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon SPW35N60CFD stands as a testament to these demands, representing a significant advancement in high-voltage power transistor technology. As part of Infineon's renowned CoolMOS™ CFD2 family, this 600V MOSFET is engineered to deliver exceptional performance in demanding applications such as switch-mode power supplies (SMPS), power factor correction (PFC), and industrial motor drives.

The core innovation of the CoolMOS™ CFD2 technology is the superjunction (SJ) principle, which fundamentally redefines the relationship between on-state resistance (RDS(on)) and breakdown voltage. This allows the SPW35N60CFD to achieve an extremely low RDS(on) of just 35 mΩ at maximum gate voltage. This low resistance translates directly into reduced conduction losses, enabling higher efficiency and lower power dissipation during operation.

A key differentiator for the CFD2 series, and this component in particular, is the integrated fast body diode. This feature is crucial for hard-switching topologies like power factor correction circuits, where the diode's reverse recovery behavior significantly impacts overall efficiency. The body diode in the SPW35N60CFD is optimized for ultra-fast reverse recovery (trr) and softness, which minimizes switching losses and reduces electromagnetic interference (EMI). This makes it an ideal choice for high-frequency switching applications, allowing for smaller magnetic components and more compact system designs.

Furthermore, the transistor boasts excellent switching characteristics and high avalanche ruggedness, ensuring reliable operation even under stressful conditions like voltage spikes and overloads. Its low gate charge (Qg) facilitates easy drive capability, simplifying the design of the gate driving circuitry.

From a thermal management perspective, the low power losses inherently lead to lower operating temperatures, enhancing long-term reliability. The device is offered in a TO-247 package, providing a robust interface for heat sinking and efficient dissipation of generated heat.

ICGOOODFIND: The Infineon SPW35N60CFD is a high-efficiency 600V MOSFET that sets a benchmark for performance. Its combination of an ultra-low RDS(on), an integrated fast body diode for minimized switching losses, and superior avalanche ruggedness makes it an outstanding choice for designers aiming to maximize power density and efficiency in next-generation power conversion systems.

Keywords: CoolMOS™ CFD2, Superjunction, Low RDS(on), Fast Body Diode, High-Efficiency Switching.