Infineon IPL60R185P7: A High-Performance 600V CoolMOS™ P7 Power Transistor

In the realm of power electronics, efficiency, reliability, and power density are paramount. Addressing these critical demands, the Infineon IPL60R185P7 stands out as a premier 600V superjunction MOSFET from the advanced CoolMOS™ P7 family. This power transistor is engineered to set new benchmarks in performance for a wide array of switching applications, including switch-mode power supplies (SMPS), power factor correction (PFC), and industrial motor drives.

The cornerstone of the IPL60R185P7's superiority is its exceptionally low effective on-state resistance (R DS(on)) of just 185 mΩ. This key parameter is crucial as it directly translates to minimized conduction losses during operation. When combined with the technology's superior switching performance, it enables systems to achieve higher overall efficiency, reducing heat generation and improving thermal management. This allows for the design of more compact products with a higher power density or the use of smaller heatsinks, ultimately leading to lower system costs.

Furthermore, the CoolMOS™ P7 technology incorporates robust and reliable body diodes. This feature is essential for hard-switching topologies like power factor correction circuits, as it enhances ruggedness and avalanche energy capability, ensuring stable and long-lasting operation even under stressful conditions. The transistor also offers a very low gate charge (Q G), which simplifies drive circuit design and reduces switching losses, further contributing to system efficiency.

Designed with sustainability in mind, this MOSFET helps power supply designers meet stringent global energy efficiency standards, such as ErP Lot 6 and CoC V5. Its optimized performance is a significant step towards reducing the carbon footprint of electronic devices.

ICGOOODFIND: The Infineon IPL60R185P7 is a top-tier component that exemplifies the innovation of the CoolMOS™ P7 series. It provides an optimal blend of ultra-low R DS(on), fast switching speed, and proven reliability, making it an outstanding choice for designers aiming to push the boundaries of efficiency and power density in their next-generation power conversion systems.

Keywords: CoolMOS™ P7, Low R DS(on), High Efficiency, Power Density, Superjunction MOSFET.